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SVG10120NAD Datasheet

Manufacturer: Silan Microelectronics

This datasheet includes multiple variants, all published together in a single manufacturer document.

SVG10120NAD datasheet preview

Datasheet Details

Part number SVG10120NAD
Datasheet SVG10120NAD SVG10120NAT-SilanMicroelectronics Datasheet (PDF)
File Size 337.99 KB
Manufacturer Silan Microelectronics
Description 100V N-CHANNEL MOSFET
SVG10120NAD page 2 SVG10120NAD page 3

SVG10120NAD Overview

SVG10120NAT(D) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, Power Management for Inverter Systems.

SVG10120NAD Key Features

  • 80A, 100V, RDS(on)(typ.)=10m@VGS=10V
  • Low gate charge
  • Low Crss
  • Fast switching
  • Improved dv/dt capability
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SVG10120NAD Distributor

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