SVG10120NAT Datasheet | Silan Microelectronics

Silan Microelectronics SVG10120NAT(D)_Datasheet 80A, 100V N-CHANNEL MOSFET DESCRIPTION SVG10120NAT(D) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, Power Management for Inverter Systems. 1 3 1.Gate 2.Drain 3.Source Features - 80A, 100V, RDS(on)(typ.)=10m@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability 3 TO-220-3L 1 3 TO-252-2L ORDERING INFORMATION Part No. SVG10120NAT SVG10120NADTR Package TO-220-3L TO-252-2L Marking 10120NAT 10120NAD Hazardous Substance Control Pb free Halogen free Packing Type Tube...