SVG10120NSA Datasheet | Silan Microelectronics

Silan Microelectronics SVG10120NSA_Datasheet 16A, 100V N-CHANNEL MOSFET DESCRIPTION SVG10120NSA is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. Features 4. Gate 1, 2, 3. Source 5, 6；7, 8. Drain 5678 12 3 - 16A, 100V, RDS(on)(typ.)=10m@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability SOP-8-225-1.27 ORDERING INFORMATION Part No. SVG10120NSA SVG10120NSATR Package SOP-8-225-1.27 SOP-8-225-1.27 Marking 10120NSA 10120NSA Hazardous Substance Control Halogen free Halogen free Packing Type Tube...