SVG10120NSA Description
SVG10120NSA is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems.
SVG10120NSA Key Features
- 16A, 100V, RDS(on)(typ.)=10m@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability