SVT035R5NMJ, SVT035R5ND Datasheet - Silan Microelectronics

SVT035R5NMJ N-CHANNEL MOSFET

The SVT035R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is wid.

SVT035R5NMJ Features

* 100A, 30V, RDS(on)(typ.)=4.0m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability NOMENCLATURE 2 1 1 3 23 1.Gate 2.Drain 3.Source TO-251J-3L 1 3 TO-252-2L 1 23 TO-220-3L S V TX X X R X N X Silan Low voltage trench MOS products Nominal

SVT035R5ND-SilanMicroelectronics.pdf