2SB183100MA
Silan
125.36kb
Schottky barrier diode chips. Ø Ø Ø Ø Ø Ø 2SB183100MA is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Low power losses, high e
📁 Related Datasheet
2SB183060MA - LOW IR SCHOTTKY BARRIER DIODE CHIPS
(Silan)
2SB183060MA
2SB183060MA SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø Ø Ø Ø Ø Ø 2SB183060MA is a schottky barrier diode chips fabricated in silicon epita.
2SB1000 - LOW FREQUENCY POWER AMPLIFIER
(Hitachi Semiconductor)
..
.
2SB1000A - LOW FREQUENCY POWER AMPLIFIER
(Hitachi Semiconductor)
..
.
2SB1001 - Silicon PNP Epitaxial Transistor
(Hitachi Semiconductor)
2SB1001
Silicon PNP Epitaxial
Application
• Low frequency power amplifier • Complementary pair with 2SD1367
Outline
UPAK
1 3 2
4
1. Base 2. Colle.
2SB1001 - Silicon PNP Transistor
(Kexin)
SMD Type
Silicon PNP Epitaxial 2SB1001
Transistors
Features
Low frequency power amplifier
Absolute Maximum Ratings Ta = 25
Parameter Collector to b.
2SB1001 - Silicon PNP Transistor
(Renesas)
2SB1001
Silicon PNP Epitaxial
REJ03G0659-0200 (Previous ADE-208-1034) Rev.2.00 Aug.10.2005
Application
• Low frequency power amplifier • Complementar.
2SB1002 - Silicon PNP Transistor
(Hitachi Semiconductor)
2SB1002
Silicon PNP Epitaxial
Application
• Low frequency power amplifier • Complementary pair with 2SD1368
Outline
UPAK
1 3 2
4
1. Base 2. Colle.
2SB1002 - Silicon PNP Transistor
(Renesas)
2SB1002
Silicon PNP Epitaxial
Application
• Low frequency power amplifier • Complementary pair with 2SD1368
Outline
RENESAS Package code: PLZZ0004CA-A.
2SB1005 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 750(Min)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage-
: V.
2SB1005 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1005
DESCRIPTION ·With TO-220C package ·High DC .
