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SCDP120R040NP4B - 1200V SiC MOS POWER TRANSISTOR

SCDP120R040NP4B Description

Silan Microelectronics SCDP120R040NP4B_Datasheet 40mΩ, 1200V SiC MOS POWER TRANSISTOR .
SCDP120R040NP4B is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s Silicon Carbide technology.

SCDP120R040NP4B Features

* 66A, 1200V, RDS(on)(typ. )= 40m@VGS=15V
* Silicon Carbide technology
* Low switching loss
* Low reverse recovery charge
* Reduced requirement for heat dissipation
* 100% avalanche tested
* Pb-free lead plating
* RoHS compliant KEY PERFORMANCE PARAMETERS Character

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1200V SiC MOS POWER TRANSISTOR Silan Semiconductors
Silan Semiconductors SCDP120R040NP4B-like datasheet