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SSM4410M
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Low on-resistance Fast switching Simple drive requirement
D D D
D
BV ID
DSS
30V 13.5mΩ 10A
R DS(ON)
G S
SO-8
S S
Description
D
Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial and industrial surface mount applications and well suited for low voltage applications such as DC/DC converters.
G S
Absolute Maximum Ratings
Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
1,2 3 3
Rating 30 ± 20 10 8 50 2.5 0.