SSF2816EB - Dual N-Channel MOSFET
(GOOD-ARK)
DESCRIPTION
The SSF2816EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.7.
SSF2816EB - MOSFET
(Silikron Semiconductor)
DESCRIPTION
The SSF2816EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.7.
SSF2816EBK - Dual N-Channel MOSFET
(GOOD-ARK)
DESCRIPTION
The SSF2816EBK uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2..
SSF2810EH2 - MOSFET
(Silikron Semiconductor)
Main Product Characteristics:
VDSS
20V
RDS(on) 10mΩ (typ.)
ID
8A①
Features and Benefits:
TSSOP-8
Advanced MOSFET process technology Ultra .
SSF2814E - N-Channel MOSFET
(GOOD-ARK)
DESCRIPTION
The SSF2814E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
SSF2814E - MOSFET
(Silikron Semiconductor)
DESCRIPTION
The SSF2814E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.