SSF2814E - N-Channel MOSFET
(GOOD-ARK)
DESCRIPTION
The SSF2814E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
SSF2814E - MOSFET
(Silikron Semiconductor)
DESCRIPTION
The SSF2814E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
SSF2814EH2 - MOSFET
(Silikron Semiconductor)
Main Product Characteristics:
VDSS RDS(on)
ID
20V 14mΩ (typ.)
8A①
Features and Benefits:
TSSOP-8
Advanced MOSFET process technology Ultra low.
SSF2816E - MOSFET
(Silikron Semiconductor Co)
SSF2816E
..
DESCRIPTION
The SSF2816E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation wit.
SSF2816EB - Dual N-Channel MOSFET
(GOOD-ARK)
DESCRIPTION
The SSF2816EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.7.
SSF2816EB - MOSFET
(Silikron Semiconductor)
DESCRIPTION
The SSF2816EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.7.