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SSF2810EH2 MOSFET

SSF2810EH2 Description

Main Product Characteristics: VDSS 20V RDS(on) 10mΩ (typ.) ID 8A① .
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

SSF2810EH2 Features

* TSSOP-8
* Advanced MOSFET process technology
* Ultra low on-resistance with low gate charge
* High Power and current handing capability
* 150℃ operating temperature

SSF2810EH2 Applications

* Absolute Max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS TJ TSTG Parameter Continuous Drain Current ① Continuous Drain Current ① Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storag

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