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SSF5508A MOSFET

SSF5508A Description

Main Product Characteristics: SSF5508A VDSS RDS(on) 55V 4.5mohm（Typ） ID 110A .
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche ra.

SSF5508A Features

* SSF5508A TOP View (TO263)
* Advanced trench MOSFET process technology
* Special designed for convertors and power controls
* Ultra low on-resistance
* 175℃ operating temperature

SSF5508A Applications

* Absolute max Rating: Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① ID @ TC = 100°C Continuous Drain Current, VGS @ 10V① IDM Pulsed Drain Current② ISM Pulsed Source Current. (Body Diode) PD @TC = 25°C Power Dissipation③ Linear derating factor VDS Drain-Source Voltage

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MOSFET Silikron Semiconductor
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