SSPL5508 N-Channel enhancement mode power field effect transistors

Silikron Semiconductor

SSPL5508 Description

Main Product Characteristics VDSS RDS(on) 55V 7.2mΩ(typ.) ID 110A .
These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.

SSPL5508 Features

* TO-220
* Advanced Process Technology

SSPL5508 Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

📥 Download Datasheet

SSPL5508 Datasheet Preview — Preview of SSPL5508 PDF

Datasheet Details

Part number: SSPL5508
Manufacturer: SilikrON Semiconductor ↗
File Size: 521.94 KB
Datasheet: SSPL5508-SilikronSemiconductor.pdf
Description: N-Channel enhancement mode power field effect transistors

📁 Related Datasheet

SSPL5505 - N-Channel MOSFET (GOOD-ARK)
SSPL2015 - N-Channel MOSFET (GOOD-ARK)
SSPL2090 - N-Channel MOSFET (GOOD-ARK)
SSPL4004 - N-Channel MOSFET (GOOD-ARK)
SSPL6022 - N-Channel MOSFET (GOOD-ARK)
SSPL6040 - N-Channel MOSFET (GOOD-ARK)
SSPL7508 - N-Channel MOSFET (GOOD-ARK)
SSPL7509 - N-Channel MOSFET (GOOD-ARK)

📌 All Tags

N-Channel enhancement mode power field effect transistors Silikron Semiconductor

Silikron Semiconductor SSPL5508-like datasheet

SSPL50N30H - N-Channel enhancement mode power field effect transistors
SSPL1010 - Schottky Barrier Rectifier
SSPL1022 - N-Channel enhancement mode power field effect transistors
SSPL1042 - N-Channel enhancement mode power field effect transistors
SSPL1090 - N-Channel enhancement mode power field effect transistors
SSPL2015D - N-Channel enhancement mode power field effect transistors