SMT002N13G1E MOSFET

Silikron

Description

Main Product Characteristics: VDSS 20V RDS(on) 12.3mΩ(typ.) ID 7.2A SOT-23 .
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

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Datasheet Specifications

Part number: SMT002N13G1E
Manufacturer: Silikron
File Size: 293.23 KB
Datasheet: SMT002N13G1E-Silikron.pdf
Description: MOSFET

Features

* Advanced MOSFET process technology

Applications

* Ultra low on-resistance with low gate charge

SMT002N13G1E Distributors

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SMT002N13G1E MOSFET Silikron

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