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SMT002NA4G1 MOSFET

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Description

Main Product Characteristics: VDSS 20V RDS(on) 131mΩ(typ.) ID 1A SOT-23 .
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

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Datasheet Specifications

Part number
SMT002NA4G1
Manufacturer
Silikron
File Size
303.76 KB
Datasheet
SMT002NA4G1-Silikron.pdf
Description
MOSFET

Features

* Advanced MOSFET process technology

Applications

* Ultra low on-resistance with low gate charge

SMT002NA4G1 Distributors

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