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SMT003P26G4 MOSFET

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Description

Main Product Characteristics: VDSS -30V RDS(on) 26.3mΩ (typ.) ID -5.8A SOT23-3L .
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

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Datasheet Specifications

Part number
SMT003P26G4
Manufacturer
Silikron
File Size
302.12 KB
Datasheet
SMT003P26G4-Silikron.pdf
Description
MOSFET

Features

* Advanced MOSFET process technology

Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

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