SMT003P51G1 MOSFET

Silikron

Description

Main Product Characteristics: VDSS -30V RDS(on) 50.5mΩ(typ) ID -3.3A SOT-23 .
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rat.

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Datasheet Specifications

Part number: SMT003P51G1
Manufacturer: Silikron
File Size: 377.45 KB
Datasheet: SMT003P51G1-Silikron.pdf
Description: MOSFET

Features

* Advanced MOSFET process technology

Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

SMT003P51G1 Distributors

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SMT003P51G1 MOSFET Silikron

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