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SMT010N02T1 MOSFET

SMT010N02T1 Description

Main Product Characteristics: VDSS 100V RDS(on) 1.8mΩ (typ.) ID 224A .
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

SMT010N02T1 Features

* Advanced MOSFET process technology

SMT010N02T1 Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

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Datasheet Details

Part number
SMT010N02T1
Manufacturer
Silikron
File Size
955.59 KB
Datasheet
SMT010N02T1-Silikron.pdf
Description
MOSFET

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