SSF1341UP
Silikron
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SSF1341 - 12V P-Channel MOSFET
(GOOD-ARK)
DESCRIPTION
The SSF1341 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V..
SSF1341 - MOSFET
(Silikron)
SSF1341
DESCRIPTION
The SSF1341 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low.
SSF1320N - N-channel MOSFET
(SeCoS Halbleitertechnologie)
SSF1320N
Elektronische Bauelemente 2A , 20V , RDS(ON) 58 mΩ N-Channel Enhancement Mode MOSFET
RoHS Compliant Product A suffix of “-C” specifies halog.
SSF1321P - P-Channel MOSFET
(SeCoS)
Elektronische Bauelemente
SSF1321P
-1.7A, -20V, RDS(on) 0.079Ω
P-Channel MOSFET
RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-fre.
SSF13N50 - MOSFET
(Silikron)
Main Product Characteristics
VDSS RDS(on)
500V 0.39Ω(typ.)
ID 13A
Features and Benefits:
TO-220
Advanced Process Technology Special designed.
SSF13N50F - MOSFET
(Silikron)
Main Product Characteristics:
VDSS RDS(on)
500V 0.41Ω(typ.)
ID 13A
Features and Benefits:
TO220F
Advanced Process Technology Special designe.
SSF13R6 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS RDS(on)
ID
100V 5Ω(typ.) 0.17A ①
D
S G
SOT-23
SSF13R6
Schematic Diagram
Features and Benefits:
Advanced tren.
SSF1006 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS RDS(on)
100V 4.6mΩ (typ.)
ID 200A ①
Features and Benefits:
TO220
Advanced MOSFET process technology Speci.
SSF1006A - MOSFET
(Silikron)
SSF1006A
Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current
ID =200A B.
SSF1006H - MOSFET
(Silikron)
Main Product Characteristics:
VDSS RDS(on)
100V 5mΩ (typ.)
ID 200A ①
Features and Benefits:
TO-247
Advanced MOSFET process technology Specia.
