SSF13N50 Datasheet, Mosfet, Silikron

SSF13N50 Features

  • Mosfet TO-220
  • Advanced Process Technology
  • Special designed for PWM, load switching and general purpose applications
  • Ultra low on-resistance with low gate charg

PDF File Details

Part number:

SSF13N50

Manufacturer:

Silikron

File Size:

482.82kb

Download:

📄 Datasheet

Description:

Mosfet. These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advan

Datasheet Preview: SSF13N50 📥 Download PDF (482.82kb)
Page 2 of SSF13N50 Page 3 of SSF13N50

SSF13N50 Application

  • Applications
  • Ultra low on-resistance with low gate charge
  • Fast switching and reverse body recovery
  • 150℃ operating temp

TAGS

SSF13N50
MOSFET
Silikron

📁 Related Datasheet

SSF13N50F - MOSFET (Silikron)
Main Product Characteristics: VDSS RDS(on) 500V 0.41Ω(typ.) ID 13A Features and Benefits: TO220F  Advanced Process Technology  Special designe.

SSF1320N - N-channel MOSFET (SeCoS Halbleitertechnologie)
SSF1320N Elektronische Bauelemente 2A , 20V , RDS(ON) 58 mΩ N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halog.

SSF1321P - P-Channel MOSFET (SeCoS)
Elektronische Bauelemente SSF1321P -1.7A, -20V, RDS(on) 0.079Ω P-Channel MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-fre.

SSF1341 - 12V P-Channel MOSFET (GOOD-ARK)
DESCRIPTION The SSF1341 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V..

SSF1341 - MOSFET (Silikron)
SSF1341 DESCRIPTION The SSF1341 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low.

SSF1341UP - MOSFET (Silikron)
.

SSF13R6 - MOSFET (Silikron)
Main Product Characteristics: VDSS RDS(on) ID 100V 5Ω(typ.) 0.17A ① D S G SOT-23 SSF13R6 Schematic Diagram Features and Benefits:  Advanced tren.

SSF1006 - MOSFET (Silikron)
Main Product Characteristics: VDSS RDS(on) 100V 4.6mΩ (typ.) ID 200A ① Features and Benefits: TO220  Advanced MOSFET process technology  Speci.

SSF1006A - MOSFET (Silikron)
SSF1006A Feathers: „ Advanced trench process technology „ avalanche energy, 100% test „ Fully characterized avalanche voltage and current ID =200A B.

SSF1006H - MOSFET (Silikron)
Main Product Characteristics: VDSS RDS(on) 100V 5mΩ (typ.) ID 200A ① Features and Benefits: TO-247  Advanced MOSFET process technology  Specia.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts