Datasheet4U Logo Datasheet4U.com

SID200N12 Datasheet - Sirectifier Semiconductors

SID200N12 NPT IGBT

SID200N12 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") www.DataSheet4U.com Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions TC = 25oC, unless otherwise specified Values 1200 Units V A A V o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < o 200(180) 400(360) _ +20 _ 40+150(125) 2500 200(130) 400(360) 1450 260(180) 400(360) 1800 C AC, 1min Visol Inverse Diode IF = -IC IFRM V A A A A A A TC= 25(80)oC TC= 25(80)oC, tP =1ms IFSM tP =10ms; sin.;Tj=1.

SID200N12 Datasheet (487.22 KB)

Preview of SID200N12 PDF
SID200N12 Datasheet Preview Page 2

Datasheet Details

Part number:

SID200N12

Manufacturer:

Sirectifier Semiconductors

File Size:

487.22 KB

Description:

Npt igbt.

📁 Related Datasheet

SID200S12 SPT IGBT (Sirectifier Semiconductors)

SID2010 3 Round Infrared LED (Allegro MicroSystems)

SID2K10C Through-hole Infrared LED (Sanken)

SID04N60-C N-Channel MOSFET (SeCoS)

SID04N65SL N-Ch Enhancement Mode Power MOSFET (SeCoS)

SID05N10 N-Channel Enhancement Mode Power MOSFET (SeCoS)

SID05N60J N-Channel MOSFET (SeCoS)

SID1003 (SID300 / SID1003) 5phi Round Infrared LED (SANKEN)

TAGS

SID200N12 NPT IGBT Sirectifier Semiconductors

SID200N12 Distributor