SID200S12 Datasheet (Sirectifier Semiconductors)

SID200S12, SPT IGBT

SID200S12 SPT IGBT Modules Dimensions in mm (1mm = 0.0394") www.DataSheet4U.com Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions TC = 25oC, unless otherwise specified Values 1200 Units V A A o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min o 310(220) 620(440) _ +20 _ 40+150(125) 4000 190(130) 620(440) 1450 V C V Visol Inverse Diode IF=-IC TC= 25(80)oC TC= 25(80)oC, tP =1ms IFRM IFSM tP =10ms; sin.;Tj=150 oC A A A SID200S12 SPT IGBT Modules