CDE7618-000

Silicon Schottky Barrier Diode Bondable Chips and Beam Leads

Skyworks

CDE7618-000 Features

* Available in both P-type and N-type low barrier designs

* Low 1/f noise

* Large bond pad chip design

* Planar passivated beam-lead and chip construction Description Skyworks beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in the Ka

CDE7618-000 General Description

Skyworks beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in the Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resis.

CDE7618-000 Datasheet (582.87 KB)