2N5142
Sprague
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Pnp transistors.
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2N5142 - High Speed Switching Transistors
(ETC)
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2N5142 - Switching Transistors
(Central)
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2N5146 - PNP SILICON ANNULAR MULTIPLE TRANSISTORS
(ETC)
2N5146 (SILICON)
PNP SILICON ANNULAR MULTIPLE TRANSISTORS
· .. designed for use in high current, high speed switching applications.
• Low Coliector·l.
2N5147 - Bipolar PNP Device
(Seme LAB)
2N5147
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
6.10 (0.240) 6.60 (0.260)
12.70 (0.500)
min.
(00.0.8395)max.
0..
2N5148 - Bipolar NPN Device
(Seme LAB)
2N5148
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package..
2N5149 - SI PNP POWER BJT
(New Jersey Semi-Conductor)
.
2N5102 - RF Power Devices
(RCA Solid State)
..
..
..
..
..
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2N5108 - NPN SILICON HIGH FREQUENCY TRANSISTOR
(Advanced Semiconductor)
2N5108
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The 2N5108 is a Designed for General Purpose Class C Amplifier Applications Up to 1 GHz.
P.
2N5108 - HIGH FREQUENCY TRANSISTOR
(Motorola)
2N5108
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Emitter Voltage (Rbe = 10(7) Collector-Base Voltage
Emitter-Base Voltage
—Collector.
2N5108 - Silicon NPN Power Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2N5108
DESCRIPTION ·High Current-Gain Bandwidth Product
: fT= 1200MHz (Min) @VCE = 10V,IE = .
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