2N5146 - PNP SILICON ANNULAR MULTIPLE TRANSISTORS

Datasheet Details

Part number	2N5146
Manufacturer	ETC
File Size	112.34 KB
Description	PNP SILICON ANNULAR MULTIPLE TRANSISTORS
Datasheet	2N5146 Datasheet
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2N5146 (SILICON) PNP SILICON ANNULAR MULTIPLE TRANSISTORS · .. designed for use in high current, high speed switching applications. • Low Coliector·l;mitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 1.0 Adc • DC Current Gain Specified - 20 (Min) @IC = 1.0 Adc • High Current·Gain-Bandwidth Product - fT= 150 MHz (Min)@lc= 50 mAdc • Fast Turn·On Time ton = 40 ns, toff = 110 ns PNPSILICON MULTIPLE TRANSISTORS *MAXIMUM RATINGS Rating Collector~Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Operating and Storage Junction Temperature Range Total Power Dissipation @ TA'" 2SoC Derate above 2SoC Total Power Dissipation@TC= 25°C Derate above 2SoC ·Indicates JEDEC Registered Data. Symbol VeEO VeB VEB Ie TJ,T"Q Value 40 40 5.0 1.

Published: Jul 14, 2018 |