2N5146 Datasheet, Transistors, ETC

PDF File Details

Part number:

2N5146

Manufacturer:

ETC

File Size:

112.34kb

Download:

📄 Datasheet

Description:

Pnp silicon annular multiple transistors.

2N5146 Application

• Applications
• Low Coliector
• l;mitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 1.0 Adc
• DC Current Gain Specifie

TAGS

2N5146

ETC

📁 Related Datasheet

2N5142 - PNP Transistors (Sprague)
.

2N5142 - High Speed Switching Transistors (ETC)
.

2N5142 - Switching Transistors (Central)
.

2N5147 - Bipolar PNP Device (Seme LAB)
2N5147 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. (00.0.8395)max. 0..

2N5148 - Bipolar NPN Device (Seme LAB)
2N5148 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package..

2N5149 - SI PNP POWER BJT (New Jersey Semi-Conductor)
.

2N5102 - RF Power Devices (RCA Solid State)
.. .. .. .. .. .

2N5108 - NPN SILICON HIGH FREQUENCY TRANSISTOR (Advanced Semiconductor)
2N5108 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N5108 is a Designed for General Purpose Class C Amplifier Applications Up to 1 GHz. P.

2N5108 - HIGH FREQUENCY TRANSISTOR (Motorola)
2N5108 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage (Rbe = 10(7) Collector-Base Voltage Emitter-Base Voltage —Collector.

2N5108 - Silicon NPN Power Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N5108 DESCRIPTION ·High Current-Gain Bandwidth Product : fT= 1200MHz (Min) @VCE = 10V,IE = .