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ST3407S23RG Datasheet - Stanson Technology

ST3407S23RG P-Channel Enhancement Mode MOSFET

ST3407S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application suc.

ST3407S23RG Datasheet (146.11 KB)

Preview of ST3407S23RG PDF

Datasheet Details

Part number:

ST3407S23RG

Manufacturer:

Stanson Technology

File Size:

146.11 KB

Description:

P-channel enhancement mode mosfet.

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ST3407S23RG P-Channel Enhancement Mode MOSFET Stanson Technology

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