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2N6659 - N-Channel MOSFET

Features

  • o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices.

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Datasheet Details

Part number 2N6659
Manufacturer Supertex
File Size 105.61 KB
Description N-Channel MOSFET
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~ 't1I !!!iupertexinc. 2N6659 N-Channel Enhancement-Mode Vertical DMOS Power FET Ordering Information BVoss / BVOGS 35V ROS(ON) (max) 1.8n IO(ON) (min) 1.5A Order Number / Package TO-39 2N6659 Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Applications o Motor control o Converters o Amplifiers o Switches o Power supply circuits o Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.
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