* o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low C1SS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhanc
VN05D
Supertex
233.25 KB
N-channel mosfet.
~ 'tlI upertexinc. VN05D N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss I BVDGS 350V 400V ROS(ON) (max) 35Q .
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