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HF3701 - SAFETY RELAY MODULE
(Hongfa Technology)
20}*z{
:,0/;? 9/4,? 57.<4/
Fad] Mg3? M=6859:87=;565 Sqha[Yd Yhhda[Ylagf? Ee]j_]f[q klgh Zmllgf1 RY^]lq \ggj
0C@MNKCL
V Q]\mf\Yfl \]ka_f g^ [aj[mal1.
HF371 - Relay
(TE)
RF Signal Relays
HF3 Relay
n Y-Design n Frequency range DC to 3GHz n Impedance 50Ω or 75Ω n Small dimensions (14.6x7.2x10mm) n 1 form C contact (1 cha.
HF372 - Relay
(TE)
RF Signal Relays
HF3 Relay
n Y-Design n Frequency range DC to 3GHz n Impedance 50Ω or 75Ω n Small dimensions (14.6x7.2x10mm) n 1 form C contact (1 cha.
HF373 - Relay
(TE)
RF Signal Relays
HF3 Relay
n Y-Design n Frequency range DC to 3GHz n Impedance 50Ω or 75Ω n Small dimensions (14.6x7.2x10mm) n 1 form C contact (1 cha.
HF37F - MINIATURE HIGH POWER RELAY
(Hongfa Technology)
42*+2
7585-=>;1 4534 :9@1; ;16-B
Idg` Pj5AH8:;<8> 0?1
Idg` Pj5A;779<:>?
Idg` Pj5AFSF8:7798799?>
2FCPQNFO
V :7D nrdo^cdib ^\k\]dgdot V >7D rdocno\i_.
HF30-28F - NPN SILICON RF POWER TRANSISTOR
(Advanced Semiconductor)
HF30-28F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF30-28F is Designed for
PACKAGE STYLE .380 4L FLG
B .112 x 45° A
FEATURES:
• PG = 20.
HF30-28S - NPN SILICON RF POWER TRANSISTOR
(Advanced Semiconductor)
HF30-28S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF30-28S is Designed for
PACKAGE STYLE .380 4L STUD
.112x45° A
FEATURES:
• PG = 20 dB.
HF3000A-TM - IGBT inverter
(Soshin)
HF3000A-TM Series
3 Phase & 3 lines 250VAC
for EMC directive,class A,B Standard of High attenuation Type
5-100A EN60939-2 (file No.R50031751)
Applic.
HF3000A-TMA - IGBT inverter
(Soshin)
HF3000A-TMA Series
3 Phase & 3 lines 250VAC
for EMC directive,class A,B Standard of High attenuation Type
5-100A EN60939-2 (file No.R50031751)
Appli.
HF3000C-TM - IGBT inverter
(Soshin)
HF3000C-TM Series
3 Phase & 3 lines 500VAC
for EMC directive,class A,B Standard of High attenuation Type
UL1283 (file No.E102708) EN60939-2 (file No.
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