Part number:
HF30-28S
Manufacturer:
Advanced Semiconductor
File Size:
17.88 KB
Description:
Npn silicon rf power transistor.
* PG = 20 dB min. at 30 W/30 MHz
* IMD3 = -30 dBc max. at 30 W (PEP)
* Omnigold™ Metalization System B C E ØC E B H I J D MAXIMUM RATINGS IC VCB VCE VEBO PDISS TJ T STG θ JC O O #8-32 UNC-2A F E G 5.0 A 65 V 35 V 4.0 V 60 W @ TC = 25 OC -65 C to +200 C -65 C to +150
HF30-28S
Advanced Semiconductor
17.88 KB
Npn silicon rf power transistor.
📁 Related Datasheet
HF30-28F NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
HF3000A-TM IGBT inverter (Soshin)
HF3000A-TMA IGBT inverter (Soshin)
HF3000C-TM IGBT inverter (Soshin)
HF3000C-TMA IGBT inverter (Soshin)
HF3000C-XO IGBT inverter (Soshin)
HF3000C-XZ IGBT inverter (Soshin)
HF3005A-TM IGBT inverter (Soshin)
HF3005A-TMA IGBT inverter (Soshin)
HF3005C-TM IGBT inverter (Soshin)