Datasheet4U.com

HF30-28S - NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

📥 Download Datasheet

HF30-28S Datasheet Preview — Preview of HF30-28S PDF

Datasheet Details

Part number	HF30-28S
Manufacturer	Advanced Semiconductor
File Size	17.88 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	HF30-28S_AdvancedSemiconductor.pdf

HF30-28S Product details

Description

The ASI HF30-28S is Designed for PACKAGE STYLE .380 4L STUD .112x45° A

Features

PG = 20 dB min. at 30 W/30 MHz.
IMD3 = -30 dBc max. at 30 W (PEP).
Omnigold™ Metalization System B C E ØC E B H I J D.

📁 HF30-28S Similar Datasheet

HF3000A-TM - IGBT inverter (Soshin)
HF3000A-TMA - IGBT inverter (Soshin)
HF3000C-TM - IGBT inverter (Soshin)
HF3000C-TMA - IGBT inverter (Soshin)
HF3000C-XO - IGBT inverter (Soshin)
HF3000C-XZ - IGBT inverter (Soshin)
HF3005A-TM - IGBT inverter (Soshin)
HF3005A-TMA - IGBT inverter (Soshin)

Other Datasheets by Advanced Semiconductor

HF30-28F - NPN SILICON RF POWER TRANSISTOR

Published: Mar 23, 2005 |