BUZ171
TEMIC
185.92kb
P-channel transistor.
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BUZ17 - Power Transistor
(Siemens Semiconductor Group)
.
BUZ171 - Power Transistor
(Siemens Semiconductor Group)
BUZ 171
SIPMOS ® Power Transistor
• P channel • Enhancement mode • Avalanche rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 171
VDS
-50 V
ID
-8 A
RDS.
BUZ172 - Power Transistor
(Siemens Semiconductor Group)
BUZ 172
SIPMOS ® Power Transistor
• P channel • Enhancement mode • Avalanche rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 172
VDS
-100 V
ID
-5.5 A
.
BUZ172 - P-Channel MOSFET
(INCHANGE)
Isc P-Channel MOSFET Transistor
·FEATURES ·With TO-220 package ·Low input capacitance and gate charges ·Low gate input resistance ·100% avalanche tes.
BUZ173 - Power Transistor
(Siemens Semiconductor Group)
BUZ 173
SIPMOS ® Power Transistor
• P channel • Enhancement mode • Avalanche rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 173
VDS
-200 V
ID
-3.6 A
.
BUZ10 - N-Channel Power MOSFET
(STMicroelectronics)
®
BUZ10
N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET™ MOSFET
T YPE BUZ 10
s s s s s
V DSS 50 V
R DS(o n) < 0.07 Ω
ID 23 A
TYPICAL RDS(on) = 0.0.
BUZ10 - Power Transistor
(Siemens Semiconductor Group)
BUZ 10
Not for new design
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 10
VDS
50.
BUZ10 - N-Channel MOSFET
(INCHANGE)
isc N-Channel Mosfet Transistor
·FEATURES ·Drain Current –ID=23A@ TC=25℃ ·Static Drain-Source On-Resistance
: RDS(on) = 0.07Ω(Max) ·175℃ operating te.
BUZ100 - Power Transistor
(Siemens Semiconductor Group)
BUZ 100
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperat.
BUZ100 - N-Channel MOSFET
(INCHANGE)
isc N-Channel Mosfet Transistor
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 0.018Ω(Max) ·Ultra low on-resistance ·Fast Switching ·175℃ o.
