TW060N120C Datasheet - TOSHIBA

TW060N120C, Silicon Carbide N-Channel MOSFET

MOSFETs Silicon Carbide N-Channel MOS TW060N120C TW060N120C 1.Applications * Switching Voltage Regulators 2..

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Datasheet Details

Part number:

TW060N120C

Manufacturer:

Toshiba ↗

File Size:

517.84 KB

Description:

Silicon Carbide N-Channel MOSFET

Features

* (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ. ) (3) High voltage: VDSS = 1200 V (4) Low drain-source on-resistance: RDS(ON) = 60 mΩ (typ. ) (5) Less susceptible to malfunction due to high threshold voltage: Vth = 3.0 to 5.0

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TW060N120C Silicon Carbide N-Channel MOSFET TOSHIBA

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