Datasheet4U Logo Datasheet4U.com

2SB1308

Plastic-Encapsulated Transistors

2SB1308 Features

* Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: TRANSISTOR (PNP) SOT-89 1. BASE 0.5 -3 -30 W (Tamb=25℃) A V 2. COLLECTOR 1 3. EMITTER 2 3 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Coll

2SB1308 Datasheet (83.26 KB)

Preview of 2SB1308 PDF

Datasheet Details

Part number:

2SB1308

Manufacturer:

TRANSYS

File Size:

83.26 KB

Description:

Plastic-encapsulated transistors.

📁 Related Datasheet

2SB1300 - PNP SILICON TRANSISTOR (NEC)
.

2SB1301 - PNP SIlicon Transistor (Renesas)
.

2SB1302 - PNP Transistor (Sanyo Semicon Device)
Ordering number : EN2555B 2SB1302 SANYO Semiconductors DATA SHEET 2SB1302 PNP Epitaxial Planar Silicon Transistor High-Current Switching Application.

2SB1302 - PNP Epitaxial Planar Silicon Transistors (Kexin)
SMD Type Transistors PNP Epitaxial Planar Silicon Transistors 2SB1302 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation.

2SB1302 - Bipolar Transistor (ON Semiconductor)
DATA SHEET .onsemi. Bipolar Transistor –20 V, –5 A, Low VCE(sat), PNP Single PCP 2SB1302 Features • Adoption of FBET, MBIT Processes • Large C.

2SB1308 - Power Transistor (Rohm)
Transistors 2SB1308 2SD1963 (94S-166-B204) (94S-342-D204) 290 Appendix Notes No technical content pages of this document may be reproduced in an.

2SB1308 - Power Transistor (GME)
Power Transistor(-50V,-3A) FEATURES  Low saturation voltage,typically VCE(sat)=-0.45(Max) at IC/IB=-1.5A/-0.15A Pb Lead-free  Excellent DC curren.

2SB1308 - PNP Transistor (WILLAS)
WILLAS SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FM120-M+ 2SB1308 THRU FM1200.

TAGS

2SB1308 Plastic-Encapsulated Transistors TRANSYS

2SB1308 Distributor