Part number:
2SB1308
Manufacturer:
TRANSYS
File Size:
83.26 KB
Description:
Plastic-encapsulated transistors.
* Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: TRANSISTOR (PNP) SOT-89 1. BASE 0.5 -3 -30 W (Tamb=25℃) A V 2. COLLECTOR 1 3. EMITTER 2 3 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Coll
2SB1308
TRANSYS
83.26 KB
Plastic-encapsulated transistors.
📁 Related Datasheet
2SB1300 - PNP SILICON TRANSISTOR
(NEC)
.
2SB1301 - PNP SIlicon Transistor
(Renesas)
.
2SB1302 - PNP Transistor
(Sanyo Semicon Device)
Ordering number : EN2555B
2SB1302
SANYO Semiconductors
DATA SHEET
2SB1302 PNP Epitaxial Planar Silicon Transistor
High-Current Switching Application.
2SB1302 - PNP Epitaxial Planar Silicon Transistors
(Kexin)
SMD Type
Transistors
PNP Epitaxial Planar Silicon Transistors 2SB1302
Features
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation.
2SB1302 - Bipolar Transistor
(ON Semiconductor)
DATA SHEET .onsemi.
Bipolar Transistor
–20 V, –5 A, Low VCE(sat), PNP Single PCP
2SB1302
Features
• Adoption of FBET, MBIT Processes • Large C.
2SB1308 - Power Transistor
(Rohm)
Transistors
2SB1308 2SD1963
(94S-166-B204)
(94S-342-D204)
290
Appendix
Notes
No technical content pages of this document may be reproduced in an.
2SB1308 - Power Transistor
(GME)
Power Transistor(-50V,-3A)
FEATURES
Low saturation voltage,typically VCE(sat)=-0.45(Max) at IC/IB=-1.5A/-0.15A
Pb
Lead-free
Excellent DC curren.
2SB1308 - PNP Transistor
(WILLAS)
WILLAS
SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE
FM120-M+ 2SB1308 THRU
FM1200.