Part number:
2SB1424
Manufacturer:
TRANSYS
File Size:
78.14 KB
Description:
Plastic-encapsulate transistors.
* Power dissipation PCM: 600 mW (Tamb=25℃) 2. COLLECTOR 3. EMITTER 1 2 3 TRANSISTOR (PNP) SOT-89 1. BASE Collector current -3 A ICM: Collector-base voltage -20 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collec
2SB1424
TRANSYS
78.14 KB
Plastic-encapsulate transistors.
📁 Related Datasheet
2SB1420 - Silicon PNP Transistor
(Sanken electric)
(2 k Ω) (80 Ω) E
Darlington
sAbsolute maximum ratings
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1420 –120 –120 –6 –16(Pulse–26) –1 80(Tc=25°C) 150 –5.
2SB1420 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min) ·High DC Current Gain-
: hFE= 20.
2SB1421 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min) ·Wide Area of Safe Operation ·Complement to.
2SB1424 - PNP Transistor
(Rohm)
Transistors
2SB1424 / 2SA1585S
Low VCE(sat) Transistor (−20V, −3A)
2SB1424 / 2SA1585S
zFeatures 1) Low VCE(sat).
VCE(sat) = −0.2V (Typ.) (IC/IB = .
2SB1424 - Transistor
(GME)
Production specification
Low VCE(sat) Transistor(-20V,-3A)
FEATURES
Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA).
Pb
Lead-free
Excellent DC cur.
2SB1424 - PNP Transistor
(HOTTECH)
Plastic-Encapsulate Transistors
FEATURES
• Low VCE(SAT) =-0.2V(Typ.) (IC/IB=-2A/-0.1mA). • Excellent DC current gain characterisitics. • Complementar.
2SB1424 - PNP Transistor
(Power Silicon)
DATA SHEET
2SB1424
PNP GENERAL PURPOSE TRANSISTORS VOLTAGE -20 Volts CURRENT -3.0 Ampere
FEATURES
z PNP SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITC.
2SB1424 - Silicon PNP transistor
(BLUE ROCKET ELECTRONICS)
2SB1424
Rev.E Mar.-2016
DATA SHEET
/ Descriptions
SOT-89 PNP 。Silicon PNP transistor in a SOT-89 Plastic Package.
/ Features
，。 Low VCE(sat).