2SA1416 - Transistor

TY Semiconductor

Datasheet Details

Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Time Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range.
Mounted on ceramic board (250 mm x 0.8 mm) 2 Symbol VCBO VCEO VEBO IC ICP PC PC.
Tj Tstg Rating -120 -100 -6 -1 -2 500 1.3 150 -55 to +150 Unit V V V.

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Published: Oct 25, 2013 |