Part number:
2SA1419
Manufacturer:
TY Semiconductor
File Size:
598.85 KB
Description:
Transistor.
* Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage te
2SA1419
TY Semiconductor
598.85 KB
Transistor.
📁 Related Datasheet
2SA1411 - Transistor
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2SA1411 - Transistor
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SMD Type
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SOT-23
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Features
Very high DC current gain:hFE=500 to 1600. High VEBO .
2SA1411 - Transistor
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Product specification
2SA1411
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
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High VEBO Volta.
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isc Silicon NPN Power Transistor
DESCRIPTION ·With TO-252(DPAK) packaging ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·F.
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SMD Type
PNP Silicon Transistor 2SA1412-Z
TO-252
+0.15 1.50 -0.15
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High Voltage: VCEO=-40.
2SA1412-Z - SILICON POWER TRANSISTOR
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To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor.
