2SA1434 - Transistor
2SA1434 Features
* Adoption of FBET process. High DC current gain (hFE=500 to 1200). +0.1 2.4-0.1 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). High VEBO (VEBO 15V). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1
