2SA1417 - Transistor

TY Semiconductor

Datasheet Details

Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range.
Mounted on ceramic board (250 mm x 0.8 mm) 2 Symbol VCBO VCEO VEBO IC ICP PC PC.
Tj Tstg Rating -120 -100 -6 -2 -3 500 1.5 150 -55 to +150 Unit V V V A A mW W Electrical.

📁 2SA1417 Similar Datasheet

2SA1411 - Transistor (ETC)
2SA1412 - PNP SILICON TRIPLE DIFFUSED TRANSISTOR (NEC)
2SA1412-Z - PNP Transistor (NEC)
2SA1413 - PNP SILICON TRIPLE DIFFUSED TRANSISTOR (NEC)
2SA1413-Z - PNP Transistor (INCHANGE)
2SA1415 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SA1416 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SA1418 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)

Other Datasheets by TY Semiconductor

Published: Oct 25, 2013 |