* Adoption of MBIT process.
* High DC current gain (hFE=500 to 1200).
* Large current capacity.
* Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max).
* High VEBO (VEBO≥15V). Package Dimensions unit:mm 2003A [2SA1436] Specifications Absolute Maximum Ratings at Ta =
2SA1436
Sanyo Semicon Device
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Pnp epitaxial planar silicon transistor.
Ordering number:EN2456 PNP Epitaxial Planar Silicon Transistor 2SA1436 High hFE, AF Amplifier Applications Applications AF amplifier, various .
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