2SA1436 Datasheet - Sanyo Semicon Device

2SA1436 PNP Epitaxial Planar Silicon Transistor

2SA1436 Features

* Adoption of MBIT process.

* High DC current gain (hFE=500 to 1200).

* Large current capacity.

* Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max).

* High VEBO (VEBO≥15V). Package Dimensions unit:mm 2003A [2SA1436] Specifications Absolute Maximum Ratings at Ta =

Datasheet Details

2SA1436

Sanyo Semicon Device

74.44 KB

Pnp epitaxial planar silicon transistor.

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