* Ultrasmall-sized package permitting 2SA1434-used sets to be made smaller, slimer.
* Adoption of FBET process.
* High DC current gain (hFE=500 to 1200).
* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
* High VEBO (VEBO≥15V). Package Dimensions unit:mm 2018B [2SA1
2SA1434
Sanyo Semicon Device
30.10 KB
Pnp epitaxial planar silicon transistor.
Ordering number:ENN1853A PNP Epitaxial Planar Silicon Transistor 2SA1434 High hFE, Low-Frequency General-Purpose Amp Applications Applications .
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