2SA1434 - PNP Epitaxial Planar Silicon Transistor
2SA1434 Features
* Ultrasmall-sized package permitting 2SA1434-used sets to be made smaller, slimer.
* Adoption of FBET process.
* High DC current gain (hFE=500 to 1200).
* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
* High VEBO (VEBO≥15V). Package Dimensions unit:mm 2018B [2SA1
