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2SA1437 - PNP Epitaxial Planar Silicon Transistor

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Sanyo Semicon Device

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2SA1437 PNP Epitaxial Planar Silicon Transistor by Sanyo Semicon Device - Datasheet Preview — Datasheet preview – 2SA1437

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Part number	2SA1437
Manufacturer	Sanyo Semicon Device
File Size	75.58 KB
Description	PNP Epitaxial Planar Silicon Transistor
Datasheet	2SA1437 Datasheet
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Product details

Features

Very small-sized package permitting sets to be made smaller and slimer.
Adoption of FBET process.
High DC current gain : (hFE=400 to 1000).
High breakdown voltage : (VCEO≥100V).
Low collector-to-emitter saturation voltage : (VCE(sat)≤0.5V).
High VEBO : (VEBO≥15V).
Small Cob : (Cob=4.0pF typ). Package Dimensions unit:mm 2003A [2SA1437] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitte.

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Published: Mar 22, 2005 |