* Very small-sized package permitting sets to be made smaller and slimer.
* Adoption of FBET process.
* High DC current gain : (hFE=400 to 1000).
* High breakdown voltage : (VCEO≥100V).
* Low collector-to-emitter saturation voltage : (VCE(sat)≤0.5V).
* High VEBO : (VEBO≥15V).
2SA1437
Sanyo Semicon Device
75.58 KB
Pnp epitaxial planar silicon transistor.
Ordering number:EN2524A PNP Epitaxial Planar Silicon Transistor 2SA1437 High-hFE, AF Amplifier Applications Applications AF amplifier, various.
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