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2SA1430 Datasheet - Toshiba Semiconductor

2SA1430 Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1430 Strobe Flash Applications Medium Power Amplifier Applications 2SA1430 Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = 1 V, IC = 4 A) Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA) Absolute Maximum Ratings (Ta = 25°C) Charact.

2SA1430_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SA1430

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

133.14 KB

Description:

Silicon pnp epitaxial type transistor.

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2SA1430 2SA1430 Silicon PNP Epitaxial Type Transistor Toshiba Semiconductor

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