2SA1428 - Silicon PNP Epitaxial Type Transistor

Toshiba Semiconductor

Datasheet Details

Part number	2SA1428
Manufacturer	Toshiba Semiconductor
File Size	159.14 KB
Description	Silicon PNP Epitaxial Type Transistor
Datasheet	2SA1428 Datasheet
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1428 Power Amplifier Applications Power Switching Applications 2SA1428 Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SC3668 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −2 A Base current IB −0.2 A JEDEC ― Collector power dissipation PC 1000 mW JEITA ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C TOSHIBA 2-7D101A Weight: 0.2 g (typ.) Note1: Using continuously under heavy loads (e.g.

Published: Mar 22, 2005 |