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2SA1429 - Silicon PNP Epitaxial Type Transistor

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Part number 2SA1429
Manufacturer Toshiba Semiconductor
File Size 172.84 KB
Description Silicon PNP Epitaxial Type Transistor
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1429 Power Amplifier Applications Power Switching Applications 2SA1429 Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SC3669. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −80 −80 −5 −2 −1 1000 150 −55 to 150 V V V A A mW °C °C JEDEC JEITA TOSHIBA ― ― 2-7D101A Note1: Using continuously under heavy loads (e.g. the application of high Weight: 0.2 g (typ.
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