2SA1435 - PNP Epitaxial Planar Silicon Transistor
2SA1435 Features
* Adoption of MBIT process.
* High DC current gain (hFE=500 to 1200).
* Large current capacity.
* Low colletor-to-emitter saturation voltage (VCE(sat)≤0.5V max).
* High VEBO (VEBO≥15V). Package Dimensions unit:mm 2003A [2SA1435] Specifications Absolute Maximum Ratings at Ta =
