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2SA1435 Datasheet - Sanyo Semicon Device

2SA1435 - PNP Epitaxial Planar Silicon Transistor

2SA1435 Features

* Adoption of MBIT process.

* High DC current gain (hFE=500 to 1200).

* Large current capacity.

* Low colletor-to-emitter saturation voltage (VCE(sat)≤0.5V max).

* High VEBO (VEBO≥15V). Package Dimensions unit:mm 2003A [2SA1435] Specifications Absolute Maximum Ratings at Ta =

2SA1435_SanyoSemiconDevice.pdf

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Datasheet Details

Part number:

2SA1435

Manufacturer:

Sanyo Semicon Device

File Size:

79.48 KB

Description:

Pnp epitaxial planar silicon transistor.

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