* 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation at 25 ambient temperature Tj Tstg 150 -55 to +150 Symbol VCBO VCEO VEBO IC PT Ra
2SA1411
TY Semiconductor
81.47 KB
Transistor.
SMD SMD Type Type
Transistors Transistors IC
Product specification
2SA1411
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
+0.1 2.4-0.1
High VEBO Volta.
📁 Related Datasheet
2SA1411 - Transistor
(ETC)
Free Datasheet http://../
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2SA1411 - Transistor
(Kexin)
SMD Type
Silicon PNP Epitaxia 2SA1411
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Features
Very high DC current gain:hFE=500 to 1600. High VEBO .
2SA1412 - PNP SILICON TRIPLE DIFFUSED TRANSISTOR
(NEC)
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2SA1412-Z - PNP Transistor
(NEC)
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2SA1412-Z - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·With TO-252(DPAK) packaging ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·F.
2SA1412-Z - Transistor
(Kexin)
SMD Type
PNP Silicon Transistor 2SA1412-Z
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
High Voltage: VCEO=-40.
2SA1412-Z - SILICON POWER TRANSISTOR
(Renesas)
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor.
