T35L3232B Datasheet - Taiwan Memory Technology

32K x 32 SRAM

T35L3232B Features

* ¡E FT pin for user configurable pipeline or flow-through operation. ¡E Fast Access times: - Pipeline

* 3.8 / 4 / 4.5 ns - Flow-through

* 9 / 10 / 11ns ¡ESingle 3.3V +0.3V/-0.165V power supply ¡ECommon data inputs and data outputs ¡EIndividual BYTE WRITE ENABLE and GLOBAL WRITE contro

T35L3232B General Description

The Taiwan Memory Technology Synchronous Burst RAM family employs high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. The T35L3232B SRAM integrates 32,768 x 32 bits SRAM.

T35L3232B Datasheet (257.88 KB)

T35L3232B Datasheet Preview — Preview of T35L3232B PDF

Datasheet Details

Part number:

T35L3232B

Manufacturer:

Taiwan Memory Technology

File Size:

257.88 KB

Description:

32k x 32 sram.

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T35L3232B 32K SRAM Taiwan Memory Technology

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T35L3232B Features

T35L3232B General Description

Datasheet Details

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