T35L3232B Datasheet (Taiwan Memory Technology)

T35L3232B, 32K x 32 SRAM

The Taiwan Memory Technology Synchronous Burst RAM family employs high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology.

Each memory cell consists of four transistors and two high valued resistors.

The T35L3232B SRAM integrates 32,768 x 32 bits SRAM

T35L3232B Features

* ¡E FT pin for user configurable pipeline or flow-through operation. ¡E Fast Access times: - Pipeline

* 3.8 / 4 / 4.5 ns - Flow-through

* 9 / 10 / 11ns ¡ESingle 3.3V +0.3V/-0.165V power supply ¡ECommon data inputs and data outputs ¡EIndividual BYTE WRITE ENABLE and GLOBAL WRITE contro