T35L6432A Datasheet (Taiwan Memory Technology)

T35L6432A, 64K x 32 SRAM

The Taiwan Memory Technology Synchronous Burst RAM family employs: high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology.

Each memory cell consists of four transistors and two high valued resistors.

The T35L6432A SRAM integrates 65536 x 32 SRAM cel

T35L6432A Features

* ¡EFast Access times: 4.5, 5, 6, 7, and 8ns ¡EFast clock speed: 125,100, 83, 66, and 50 MHz ¡EProvide high performance 3-1-1-1 access rate ¡EFast OE access times: 4.5, 5 and 6ns ¡ESingle 3.3V +10%/-5% power supply ¡ECommon data inputs and data outputs ¡EBYTE WRITE ENABLE and GLOBAL WRITE control ¡ETh