T35L6432B Datasheet - Taiwan Memory Technology

64K x 32 SRAM

T35L6432B Features

* Fast Access times: 9 / 10 / 11 / 12 ns

* Single 3.3V (+0.3V/-0.165V) power supply

* Common data inputs and data outputs

* Individual BYTE WRITE ENABLE and GLOBAL WRITE control

* Three chip enables for depth expansion and address pipelining

* Clock-co

T35L6432B General Description

The Taiwan Memory Technology Synchronous Burst RAM family employs high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. The T35L6432B SRAM integrates 65536 x 32 SRAM cells.

T35L6432B Datasheet (159.00 KB)

T35L6432B Datasheet Preview — Preview of T35L6432B PDF

Datasheet Details

Part number:

T35L6432B

Manufacturer:

Taiwan Memory Technology

File Size:

159.00 KB

Description:

64k x 32 sram.

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T35L6432B 64K SRAM Taiwan Memory Technology

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T35L6432B Features

T35L6432B General Description

Datasheet Details

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