T35L6432B Datasheet (Taiwan Memory Technology)

T35L6432B, 64K x 32 SRAM

The Taiwan Memory Technology Synchronous Burst RAM family employs high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology.

Each memory cell consists of four transistors and two high valued resistors.

The T35L6432B SRAM integrates 65536 x 32 SRAM cells

T35L6432B Features

* Fast Access times: 9 / 10 / 11 / 12 ns

* Single 3.3V (+0.3V/-0.165V) power supply

* Common data inputs and data outputs

* Individual BYTE WRITE ENABLE and GLOBAL WRITE control

* Three chip enables for depth expansion and address pipelining

* Clock-co