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T35L6464A Datasheet - Taiwan Memory Technology

64K x 64 SRAM

T35L6464A Features

* Fast Access times: 5, 6, 7, and 8ns

* Fast clock speed: 100, 83, 66, and 50 MHz

* Provide high performance 3-1-1-1 access rate

* Fast OE access times: 5 and 6ns

* Single 3.3V +10% / -5V power supply

* Common data inputs and data outputs

* BYT

T35L6464A General Description

The Taiwan Memory Technology Synchronous Burst RAM family employs: high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. The T35L6464A SRAM integrates 65536 x 64 SRAM cell.

T35L6464A Datasheet (157.32 KB)

Preview of T35L6464A PDF

Datasheet Details

Part number:

T35L6464A

Manufacturer:

Taiwan Memory Technology

File Size:

157.32 KB

Description:

64k x 64 sram.

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TAGS

T35L6464A 64K SRAM Taiwan Memory Technology

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