T35L6464A Datasheet (Taiwan Memory Technology)

T35L6464A, 64K x 64 SRAM

The Taiwan Memory Technology Synchronous Burst RAM family employs: high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology.

Each memory cell consists of four transistors and two high valued resistors.

The T35L6464A SRAM integrates 65536 x 64 SRAM cell

T35L6464A Features

* Fast Access times: 5, 6, 7, and 8ns

* Fast clock speed: 100, 83, 66, and 50 MHz

* Provide high performance 3-1-1-1 access rate

* Fast OE access times: 5 and 6ns

* Single 3.3V +10% / -5V power supply

* Common data inputs and data outputs

* BYT