1SS133M
Taiwan Semiconductor
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Hermetically sealed glass switching diodes. only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's ter
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1SS133 - Switching diode
(Rohm)
1SS133
Diodes
Switching diode
1SS133
Applications High speed switching External dimensions (Units : mm)
CATHODE BAND (YELLOW) φ0.4±0.1
Features 1.
1SS133 - SWITCHING DIODES
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1SS133 - HIGH SPEED SWITCHING DIODE
(EIC)
1SS133
FEATURES :
• High switching speed: max. 4 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max. 90 V • Pb / RoHS Fre.
1SS133 - High Speed Switching Diode
(MCC)
MCC
TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth
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% # .
1SS133 - Silicon Epitaxial Planar Switching Diode
(JGD)
Features
* Glass sealed envelope * High speed * High reliability * High-speed switching
1SS133
Silicon Epitaxial Planar Switching Diode
ABA
C D Catho.
1SS133 - Silicon Epitaxial Planar Switching Diode
(PACO)
1SS133
Silicon Epitaxial Planar Switching Diode
Features • Glass sealed envelope • High speed • High reliability
Applications • High-speed switching
A.
1SS133S - Silicon Epitaxial Planar Switching Diode
(JGD)
Features
* Glass sealed envelope * High speed * High reliability * High-speed switching
1SS133S
Silicon Epitaxial Planar Switching Diode
ABA
C D Cath.
1SS130 - HIGH SPEED SWITCHING DIODE
(EIC)
..
1SS130
FEATURES :
• High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max..
1SS131 - HIGH SPEED SWITCHING DIODE
(EIC)
..
1SS131
FEATURES :
• High switching speed: max. 4 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max..
1SS132 - HIGH SPEED SWITCHING DIODE
(EIC)
..
1SS132
FEATURES :
• High switching speed: max. 4 ns • Continuous reverse voltage:max. 50 V • Repetitive peak reverse voltage:max..