1SS133
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Switching diode.
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1SS130 - HIGH SPEED SWITCHING DIODE
(EIC)
..
1SS130
FEATURES :
• High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max..
1SS131 - HIGH SPEED SWITCHING DIODE
(EIC)
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1SS131
FEATURES :
• High switching speed: max. 4 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max..
1SS132 - HIGH SPEED SWITCHING DIODE
(EIC)
..
1SS132
FEATURES :
• High switching speed: max. 4 ns • Continuous reverse voltage:max. 50 V • Repetitive peak reverse voltage:max..
1SS133 - SWITCHING DIODES
(Leshan Radio Company)
.
1SS133 - HIGH SPEED SWITCHING DIODE
(EIC)
1SS133
FEATURES :
• High switching speed: max. 4 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max. 90 V • Pb / RoHS Fre.
1SS133 - High Speed Switching Diode
(MCC)
MCC
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Micro Commercial Components
omponents 20736 Marilla Street Chatsworth
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1SS133 - Silicon Epitaxial Planar Switching Diode
(JGD)
Features
* Glass sealed envelope * High speed * High reliability * High-speed switching
1SS133
Silicon Epitaxial Planar Switching Diode
ABA
C D Catho.
1SS133 - Silicon Epitaxial Planar Switching Diode
(PACO)
1SS133
Silicon Epitaxial Planar Switching Diode
Features • Glass sealed envelope • High speed • High reliability
Applications • High-speed switching
A.
1SS133M - Hermetically Sealed Glass Switching Diodes
(Taiwan Semiconductor)
Small Signal Product
1SS133M
Taiwan Semiconductor
300mW, Hermetically Sealed Glass Switching Diodes
FEATURES
- Fast switching device (trr < 4.0 ns).
1SS133S - Silicon Epitaxial Planar Switching Diode
(JGD)
Features
* Glass sealed envelope * High speed * High reliability * High-speed switching
1SS133S
Silicon Epitaxial Planar Switching Diode
ABA
C D Cath.